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implantation depth [1 record]

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Record 1 2007-07-04

English

Subject field(s)
  • Semiconductors (Electronics)
  • Physics of Solids
CONT

The method of claim ... wherein the material of the covering layer is chosen to minimize differences between a coefficient of implantation depth of semiconductor material of the uneven surface layer and a coefficient of implantation depth of the covering layer material.

French

Domaine(s)
  • Semi-conducteurs (Électronique)
  • Physique des solides
CONT

Implantation des ions dans le semiconducteur [...] La profondeur d'arrêt (ou d'implantation), pour une impureté et un semiconducteur donnés, dépend de l'énergie du faisceau [d'ions]. En règle générale, elle est inférieure au micron.

Spanish

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